Shyh-Chiang Shen, Ph.D. // Patents


last updated on Sept. 2007

Awarded patents
  1. “Collector layer structure for a double hetero-junction bipolar transistor for power amplification applications”, Shyh-Chiang Shen, David C. Caruth, and Milton Feng, U.S. Patent # 7,115,918, October 3, 2006
  2. “High Cycle Mems Device”, Milton Feng, Nick Holonyak, Jr., David Becher, Shyh-Chiang Shen, and Richard Chan, July 19, 2005, U.S. Patent number 6,919,784
  3. “Indium phosphide heterojunction bipolar transistor layer structure and method of making the same,” M. Feng, S.-C. Shen, and D. Caruth, Patent no. 6,770,919, Aug. 3, 2004
  4. “Integrated photodetector and heterojucntion bipolar transistors,” M. Feng and S.C. Shen, Patent No. 6,727,530, Apr. 27, 2004.
  5. “Method of manufacturing a microelectromechanical switch,” M.Feng and S.-C. Shen, Patent No. 6,678,943, Jan. 20, 2004
  6. “Electromagnetic energy controlled low actuation voltage microelectromechanical switch,” Milton Feng and S.C. Shen, US patent No. US 6,717,496 B2, Apr. 6, 2004
  7. “Low actuation voltage microelectromechanical device and method of manufacture,” Milton Feng and S.C. Shen, U.S. Patent No. 6,143,997, November 7, 2000
  8. “High cycle MEMS device,” M. Feng, N. Holonyak, Jr., D. Becher, S.-C. Shen, and R. Chan, U.S. Patent number 7,142,076, issued November 28, 2006