A research group led by: Prof. Shyh-Chiang Shen
Major research interests: Lasers, LEDs, Photodetectors, Electronic Switches, and Transistors.
The SRL is actively doing researching on compound semiconductor based electronic and optoelectronic devices. These devices are built on conventional III-V materials such as InP or advanced materials systems such as III-nitride (III-N). Major emphasis of these research projects are:
- High-performance semiconductor devices with focus on physical design simulation, fabrication, and characterizations
- Manufacturable device and circuit development for integrated electronics and integrated photonics.
Current research topics:
- GaN vertical switches for kV power applications
- III-N bipolar transistors
- III-N UV avalanche photodiodes in linear-mode and Geiger-mode operations
- III-N visible & UV emitters (laser diodes & LEDs)
- InP-based near-IR emitters
Picture Gallery of III-N devices created in SRL@GT
Vertical GaN PIN rectifiers
III-N Lasers and Avalanche Photodetectors
High-performance GaN/InGaN HBTs
We have a 1,000 square-feet of class-1,000 cleanroom laboratory for semiconductor fabrication and measurement. We also access other fabrication facilities at Georgia Tech’s Institute of Electronic and Nanotechnology (IEN) to conduct our research projects. Prof. Shen is also affiliated with Georgia Tech’s Center for Compound Semiconductors (CCS), the Package Research Center (PRC), and the Georgia Electronic Design Center (GEDC) under the IEN.
Prof. Shen’s research group has pushed the technology advancement toward a new state of the art. His research group has achieved many “the first” in III-N device technologies over the years. These device demonstration includes the first high-frequency operation of GaN heterojunction bipolar transistors (HBTs), the first GaN avalanche phototransistors, high-voltage AlGaN/GaN HEFTs, 1.2-kV class vertical PIN rectifiers, DUV lasers, and Geiger-mode GaN APDs. The technology development interests are predominantly focused on creating viable and manufacturable semiconductor device technologies for commercial applications in 5 to 10 years. Read on for an explanation of why we concentrate on gallium nitride (GaN).
We are constantly looking for highly motivated students with strong semiconductor physics background for III-N optoelectronic device and/or power electronic device research. The research involves experimental study of semiconductor device fabrication technology using cleanroom laboratories, computational simulations, and specialized characterization instruments. Undergraduate students (GT only) who are interested in exploring these topics are encouraged to contact Prof. Shen directly.
School of Electrical and Computer Engineering
777 Atlantic Drive, NW
Atlanta, GA 30332-0250
Copyright ©2005—2020 S.-C. Shen.