Shyh-Chiang Shen, Ph.D. // Publications

Shyh-Chiang Shen, Ph.D. // Publications

List of Publications

last updated on 12/2013

Journal Papers
  1. S.C. Shen, D. Becher, Z. Fanm D. Caruth, and M. Feng,”Development of broadband low-actuation-voltage RF MEM switches” Active and Passive Elec. Comp., Vol. 25, pp. 97-111, March, 2002
  2. M. D. Hampson, S.-C. Shen, R. S. Schwindt, R. K. Price, U. Chowdhury, M. M. Wong, T. G. Zhu, D. Yoo, R. D. Dupuis, and M. Feng, “Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz,” Electron Device Letters, IEEE, vol. 25, pp. 238-240, 2004 (PDF)
  3. M. Feng, S.C. Shen, D. Caruth, and J-J Huang, “Device Technologies for RF Front-end Circuits in the Next Generation Wireless Communications,” Proc. of the IEEE: Special Issue, Vol. 92, no. 2, pp. 354-375, Feb. 2004 (PDF)
  4. T. Chung, J. Limb, J. Ryou, W. Lee, P. Li, D. Yoo, X.-B. Zhang, S.-C. Shen, R. D. Dupuis, D. Keogh and P. Asbeck, B. Chukung, M. Feng, D. Zakharov, and Z. Lilienthal-Weber, “The growth of InGaN HBT by MOCVD,” Journal of Electronic Materials, vol. 35, no. 4, p 695-700, April 2006
  5. T. Chung, J. Limb. D. Yoo, J.H. Ryou, W. Lee, S.-C. Shen, R.D. Dupuis, D. Keogh, and P. Asbeck, “Device operation of InGaN heterojunction bipolar transistor with a graded-emitter design,” Appl. Phys. Lett., vol. 88, pp. 183501, 2006
  6. D. Keogh, P. Asbeck, T. Chung, J. Limb, D. Yoo, J. Ryou, W. Lee, S.-C. Shen, and R. Dupuis, “High current gain InGaN/GaN HBTs with 300o C operating temperature,” Electronics Lett., vol.42, no. 11,pp. 661-662 May 2006
  7. J. B. Limb, D. Yoo, J. H. Ryou, W. Lee, S. C. Shen, R. D. Dupuis, M. L. Reed, C. J. Collins, M. Wraback, D. Hanser, E. Preble, N. M. Williams, and K. Evans, “GaN Ultraviolet Avalanche Photodiodes with Optical Gain Greater Than 1000 Grown on GaN Substrates by Metalorganic Chemical Vapor Deposition,” Appl. Phys. Lett., vol. 89, pp 011112, 2006
  8. B. F. Chu-Kung, M. Feng, G. Walter, N. Holonyak, Jr., T. Chung, J. Ryou, J. Limb, D. Yoo, S.-C. Shen, R. Dupuis, D. Keogh, and P. Asbeck, “Graded-base InGaN/GaN Heterojunction bipolar light-emitting transistors,” Appl. Phys. Lett., vol. 89, pp. 082108, 2006
  9. J. B. Limb, D. Yoo, J.-H. Ryou, W. Lee, S.-C. Shen and R.D. Dupuis, “High performance GaN pin rectifiers grown on free-standing GaN substrates,” Electronics Lett., vol. 42, no. 22, pp. 1313-1314, October, 2006
  10. J.-B. Limb, D. Yoo, J.-H. Ryou, S.-C. Shen, and R.D. Dupuis, “Low on-resistance GaN pin rectifiers grown on 6H-SiC substrates,” Electronics Letters, vol. 43, no. 6, pp. 366-367, March 15, 2007
  11. R. D. Dupuis, T. Chung, D. Keogh, J.-H. Ryou, D. Yoo, J. Limb, W. Lee, S.-C. Shen, and P. M. Asbeck, “High current gain graded GaN/InGaN heterojunction bipolar transistors grown on sapphire and SiC substrates by metalorganic chemical vapor deposition,” Journal of Crystal Growth, vol. 298, pp. 852-6, Jan., 2007
  12. S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J. Ryou, and R. D. Dupuis, “Comparison of GaN avalanche photodiodes fabricated on SiC and GaN substrates,” ECS Transactions, vol. 11, no. 5, p. 91, 2007
  13. D. Yoo, J. Limb,, J.-H. Ryou, Y. Zhang, S.-C. Shen, R. D. Dupuis, D. Hanser, E. Preble, and K. Evans, “AlxGa1-xN Ultraviolet Avalanche Photodiodes Grown on GaN Substrates,” IEEE Photonics Technology Letters, vol. 19, no. 17, pp. 1313-1315, Sept., 2007
  14. S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J.-H. Ryou, P. D. Yoder, and R. D. Dupuis, “Performance of Deep ultraviolet GaN avalanche photodiodes grown by MOCVD,” IEEE Photonics Technology Letters, vol. 19, no. 21, pp. 1744-1746, Nov. 2007
  15. J. P. Liu, J.-H. Ryou, D. Yoo, Y. Zhang, J. Limb, C. A. Horne, S-C. Shen, and R. D. Dupuis, D. Hanser, E. Prebe, and K. Evans, ” III-nitride heterostructure field effect transistors grown on semi-insulating GaN substrate without interface charge,” Applied Physics Letters, vol. 92, no. 13, p 133513-1-3, March 2008
  16. Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. Dupuis, and S.-C. Shen, “GaN ultraviolet avalanche photodiode fabricated on free-standing bulk GaN substraes,” Physica Status Solidi (c), vol. 5, no. 6, p. 2290-2292, May 2008.
  17. J. Limb, D. Yoo, Y. Zhang, J.-H. Ryou, S.-C. Shen, and R. D. Dupuis, “GaN ultraviolet avalanche photodiodes grown on 6H-SiC substrates with SiN passivation,” Electronics Letters,vol. 44, p. 313, 2008
  18. J.-H. Ryou, J.-P. Liu, Y. Zhang, C. A. Horne, W. Lee, S.-C. Shen, and R.D. Dupuis, “Surface treatment on the growth surface of semi-insulating GaN bulk substrate for III-nitride heterostructure field-effect transistors,” Physica Status Solidi (c), vol. 5, no. 6, p. 1849-1851, May 2008
  19. Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. Dupuis, and S.-C. Shen, “GaN ultraviolet avalanche photodiode fabricated on free-standing bulk GaN substrates,” Physica Status Solidi (c), vol. 5, no. 6, p. 2290-2292, May 2008
  20. R. D. Dupuis, J.-H. Ryou, S.-C. Shen, P. D. Yoder, Y. Zhang, H. J. Kim, S. Choi, and Z. Lochner, “Growth and fabrication of high-performance GaN-based ultraviolet avalanche photodiodes,” Journal of Crystal Growth, vol. 310, pp. 5217-5222, 2008.
  21. S. Sridharan, P. D. Yoder, S.-C. Shen, J.-H. Ryou and R. D. Dupuis, “Geiger mode simulation of GaN homojunction avalanche photodetectors,” Physica Status Solidi (c), vol. 6, pp. S662-S665, June 2009.
  22. Y. Zhang, S.-C. Shen, H.-J. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and B. Narayan, “Low-noise GaN ultraviolet p-i-n photodiodes on GaN substrates,” Applied Physics Letters, vol. 94, pp. 221109, June 4, 2009.
  23. S. Choi, H. Kim, Y. Zhang, X. Bai, D. Yoo, J. Limb, J.-H. Ryou, S.-C. Shen, P.D. Yoder, and R.D. Dupuis, “Geiger-mode operation of GaN avalanche photodiodes grown on GaN substrates,” IEEE Photonics Technology Letters, vol. 21, no. 20, pp. 1526-1528, Oct. 15, 2009.
  24. S.-C. Shen, Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, and J.-H. Ryou, “Surface leakage in GaN/InGaN double heterojunction bipolar transistors,” IEEE Electron Device Letters, vol. 30, no 11, pp. 1119-1121, November, 2009
  25. A. Venkatachalam,, B. Klein, J.-H. Ryou, S.-C. Shen, R. D. Dupuis, and P. D. Yoder, “Design strategies for InGaN-based green lasers,” IEEE Journal of Quantum Electronics, vol. 46, no. 2, pp. 238-245, Feb. 2010
  26. J. Liu, Y. Zhang, Z. Lochnwe, S. Kim, H, Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Wei, K. Sun, A. Fisher, and F. Ponce, “Performance improvement of InGaN-based laser diodes by epitaxial layer structure design,” Proc. of SPIE, Vol. 7602, pp. 760219-1 – 6, 2010
  27. S. Choi, H.-J. Kim. Z. Lochner, Y. Zhang, Y.-C. Lee, S.-C. Shen, J.-H. Ryou, and R. D. Dupuis, “Threshold voltage control of InAlN/GaN heterostructure field-effect transistors for depletion- and enhancement-mode operation,” Applied Physics Letters, Vol. 96, pp. 243506-1 – 3, 2010
  28. Y.-C. Lee, H.-J. Kim, Y. Zhang, S. Choi, R. D. Dupuis, J.-H. Ryou, and S.-C. Shen, “High-performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach,” Phys. Status Solidi C, Vol. 7, No. 7-8, pp. 1970-1973, May, 2010
  29. Y.-C. Lee, Y. Zhang, H.-J. Kim, S. Choi, Z. Lochner, R. D. Dupuis, J.-H. Ryou, and S.-C. Shen, “High-current-gain direct-growth GaN/InGaN double heterojunction bipolar transistors,” IEEE Transactions on Electron Devices, Vol. 57, No. 11, pp. 2964-2969, November 2010
  30. Y. Zhang, J.-P. Liu, T.-T. Kao, S. Kim, Y.-C. Lee, Z. Lochner, R. D. Dupuis, J.-H. Ryou, P. D. Yoder, and S.-C. Shen, ” Performance Enhancement of InGaN-based Laser Diodes Using a Step-Graded AlxGa1-xN Electron Blocking Layer,” accepted for publication in the International Journal of High Speed Electronics and Systems, Nov. 2010
  31. Z. Lochner, H.-J. Kim, S. Choi, Y.-C. Lee, Y. Zhang, S.-C. Shen, J.-H. Ryou, and R. D. Dupuis, “Growth and characterization of NpN heterojunction bipolar transistors with In0.03Ga0.97N and In0.05Ga0.95N bases,” Journal of Crystal Growth, Vol. 315, no. 1, pp. 278-282, 2011
  32. J. Liu, Y. Zhang, Z. Lochner, S. Kim, H. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Wei, K. Sun, A. Fischer, and F. Ponce, “Performance characteristics of InAlGaN laser diodes depending on electron blocking layer and waveguide layer design grown by metalorganic chemical vapour deposition,” Journal of Crystal Growth, Vol. 315, no. 1, pp. 272-277, 2011
  33. Y. Zhang, Y. Lee, Z. Lochner, H. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, “High-Performance GaN/InGaN double heterojunction bipolar transistors on with power density > 240 kW/cm2,” Physica Status Solidi (c), vol. 8, no. 7-8, pp. 2451-2453, 2011.
  34. Y. Zhang, T.-T. Kao, J.-P. Liu, Z. Lochner, S.-S. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen “Effects of a step-graded AlxGa1-xN electron blocking layer in InGaN-based laser diodes,” Journal of Applied Physics, vol. 109, p. 083115, 26 April 2011.
  35. S.-C. Shen, R. D. Dupuis, Y.-C. Lee, H.-J. Kim, Y. Zhang, Z. Lochner, P. D. Yoder, and J.-H. Ryou, “GaN/InGaN Heterojunction Bipolar Transistors with fT > 5 GHz,” IEEE Electron Device Letters, vol. 32, no. 8, pp. 1065-1067, August 2011.
  36. Z. Lochner, H.-J. Kim, Y.-C. Lee, Y. Zhang, S. Choi, S.-C. Shen, P. D. Yoder, J.-H. Ryou, and R. D. Dupuis, “Npn-GaN/InGaN/GaN heterohunction bipolar transistor on free-standing GaN substrate,” Applied Physics Letters, vol. 99, pp. 193501-3, Nov. 2011
  37. Y.-C. Lee, Y. Zhang, Z. Lochner, H.-J. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, “GaN/InGaN heterojunction bipolar transistors with ultra-high d.c. power density > 3 MW/cm2,” in Physica Status Solidi(a), vol. 209, no. 3, pp. 497-500, February 2012
  38. M. Satter, H.-J. Kim, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, “Design and analysis of 250-nm AlInN laser diodes on AlN substrates using tapered electron blocking layers,” in IEEE Journal of Quantum Electronics, Vol. 48, no. 5, pp. 703-711, 2012.
  39. M. Satter, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, “Polarization matching in AlGaN-Based multiple quantum well deep ultraviolet laser diodes on AlN substrates using quarternary AlInGaN barriers,” in Journal of Lightwave Technology, vol. 30, no. 18, pp. 3017-3025, September 15, 2012.
  40. S.-C. Shen, R. D. Dupuis, A. Lochner, Y. Lee, T.T. Kao, Y. Zhang*, H.-J. Kim and J.-H Ryou, “Working toward high-power GaN/InGaN Heterojunction Bipolar Transistors,” (Invited) in Semiconductor Science and Technology, Vol. 28, no. 7, p. 074025 (8 pp), 2013.
  41. M. Satter, Z. Lochner, J.-H. Ryou, S.-C. Shen, R. D. Dupuis and P. D. Yoder, “AlGaN-based lateral current injection laser diodes using regrown ohmic contacts,” IEEE Photonic Technology Letters, vol. 25, no. 3, pp. 313-316, February 2013.
  42. Z. Lochner, X. Li, T.-T. Kao, M. Satter, H.-J. Kim, S.-C. Shen, P. D. Yoder, J.-H. Ryou, R. D. Dupuis, K. Sun, Y. Wei, T. Li, A. Fisher and F. A. Ponce, “Stimulated emission at 257 nm from an optically pumped AlGaN heterostructure on AlN substrate,” Physica Status Solidi(a)-Applications and Materials Science, vol. 210, no. 9, pp. 1768-70, September 2013.
  43. Z. Lochner, T.-T. Kao, Y.-S. Liu, X.-H. Li, S.-C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. Fisher and F. A. Ponce, “Room-temperature oprically pumped AlGaN-AlN multiple-quantum-well lasers operating at
  44. Z. Lochner, T.-T. Kao, Y.-S. Liu X.-H. Li, S.-C. Shen, P. D. Yoder, J. H. Ryou, R. D. Dupuis, Y. Wei, H. Xie, A. Fisher and F. A. Ponce, “Deep-ultraviolet lasing at 243 nm from photo-pumped AlGaN/AlN heterostructure on AlN substrates,” Applied Physics Letters , vol. 102, no. 10, p. 101110 (4 pp.), March, 2013.
  45. T. Kao, Y. Liu, M. Satter, X. Li, Z. Lochner, P. D. Yoder, T. Detchprohm, R. D. Dupuis, S.-C. Shen, J.-H. Ryou, A. Fischer, Y. Wei, H. Xie, F. A. Ponce, “Sub-250 nm, low-threshold deep-ultraviolet AlGaN-based heterostructure laser employing HfO2/SiO2 dielectric mirrors,” Applied Physics Letter, vol. 103, no. 21, pp. 211103, November, 2013.
  46. R. D. Dupuis, J. Kim, Y.-C. Lee, Z. Lochner, M. Ji, T.-T. Kao, J.-H. Ryou, T. Detchphrom, and S.-C. Shen, “III-N high-power bipolar transistors,” ECS Transactions, vol. 58, no. 4, pp. 261-267, 2013.
  47. Y.-L. Lee, T.-T. Kao, J. Merola and S.-C. Shen, “A remote oxygen plasma surface treatment technique for III-nitride heterojunction field-effect transistors,” Accepted for publication to the IEEE Transactions on Electron Devices on December 16, 2013
Refereed Conference Papers
  1. Z. Tang, H. Hsia, R. Shimon, D. Caruth, D.Becher, S.-C. Shen, and M. Feng,”DC and microwave performance evaluation of 100GHz ion-implanted MESFET and MOCVD epitaxial doped-channel HFET,” in 26th Intl. Symp. on Compound Semiconductors, Berlin, Germany, Aug. 22-26, 1999
  2. S.-C. Shen and M. Feng, “Low actuation voltage RF MEMS switches with signal frequency from 0.25GHz to 40GHz,” in the IEEE International Electron Device Meetings 1999, Dec. 5-8, 1999 (PDF)
  3. D. Caruth, R.L. Shimon, M. Heins, H. Hsia, Z. Tang, S.-C. Shen, D. Becher, and M. Feng, “Low cost 38GHz and 77GHz CPW MMICs using ion-implanted GaAs MESFETs,” in MTT Symposium Digest, June 2000 (PDF)
  4. R. Dupuis, D. J. H. Lambert, U. Chowdhury, M. M. Wong, T. G. Zhu, B. S. Shelton, and Ho Ki Kwon, J. J. Huang, S.-C. Shen and M. Feng, “Properties of AlGaN/GaN heterostructure electronic devices grown by metalorganic chemical vapor deposition,” in Next Generation mm-Wave Solid State Power Workshop, Oct. 22nd, 2000
  5. S.-C. Shen, D. Caruth, and M.Feng, “Broadband low actuation voltage RF MEM switches,” in IEEE 2000 GaAs IC Symposium Digest, Nov. 5-8, 2000 (PDF)
  6. S.-C. Shen, D. Becher, D. Caruth, and M. Feng, “Sub-10volts RF MEM switches,” in 2001 Government Microcircuit Application Conference, Mar. 3, 2001
  7. J. Mu , Z. Tang , D. Becher , S.-C. Shen , and M. Feng, “Low cost GaAs MESFET and InP HFET technologies for 40 Gb/s OEICs,” in Proceedings of SPIE – The International Society for Optical Engineering , v 4111, pp. 171-181, 2000
  8. B. Shelton, S.-C. Shen, D. Lambert, T.Zhu, M. Wong, U. Chowdhury, H. Kwon, K. Kim, J. Denyszyn, M. Feng, and R. Dupuis, “Comparison of AlGaN/GaN HFETs on Sapphire and SiC substrates,” in Tenth Biennial Organometallic Vapor Phase Epitaxy Workshop, March 11-15, 2001
  9. D. Becher, S.-C. Shen, D. Caruth, and M. Feng, “Process optimization for RF performance of ion-implanted E/D MESFETs,” in 2001 International GaAs Mantech Conference, May 24-27, 2001 (PDF)
  10. S.-C. Shen, D. Becher, and M. Feng, “Development of low-voltage RF MEM switches.” in 2001 International GaAs Mantech Conference, May 24-27, 2001 (PDF)
  11. S.-C. Shen, D. C. Caruth, and M. Feng, “Performance of InP/InGaAs heterojunction bipolar transistors” in 2002 Intl. GaAs MANTECH, San Diego, CA, Apr. 8, 2002 (PDF)
  12. D. Caruth, S.-C. Shen, D. Chan, J. Schutt-Aine, and M. Feng, “A 40Gb/s integrated PIN+TIA optical receiver using an InP/InGaAs SHBT technology,” in Technical Digest of 2002 IEEE GaAs IC Symposium (PDF)
  13. S.-C. Shen, D. Caruth, D. Chan, A. Thu, J. Feng, J. Schutt-Aine, and M. Feng, “An InP/InGaAs SHBT technology for high-speed monolithic optical receivers,” in 2003 International MANTECH conference, Scottdale, AZ, May 21-24, 2003 (PDF)
  14. B. F. Chu-Kung, S.-C. Shen, W. Hafez and M. Feng,”Observations of Current Blocking in InP/GaAsSb DHBTs,” in the Technical Digest of the 2004 CS Mantech, May, 2004, Miami, FL (Link)
  15. K. Cimino, Y.-M. Hsin , S.-C. Shen, and M. Feng, “Study of 1/f and 1/f2 noise for InP DHBT,” in the Technical Digest of 2005 Comp. Semi. MANTECH Conference , New Orleans , Louisiana , April 11-14, 2005 (PDF)
  16. B. F. Chu-Kung, S.-C. Shen, W. Hafez, and M. Feng,”Process and Performance Improvements of Type-II GaAsSb/InP DHBTs,” in the Technical Digest of 2005 Comp. Semi. MANTECH Conference , New Orleans , Louisiana , April 11-14, 2005 (PDF)
  17. T. Chung, D. Keogh, B. Chukung, J. Limb, J.-H. Ryou, W. Lee, P. Li, D. Yoo, X.-B. Zhang, D. Zakharov, Z. Lilienthal-Weber, P. Asbeck, M. Feng, S.-C. Shen, and R. D. Dupuis, “The growth of InGaN HBT by MOCVD,” presented at the Electronic Material Conference, Santa Barbara, CA, 2005
  18. B. F. Chu-Kung, S.-C. Shen, W. Snodgrass, and M. Feng, “Investigation of base-collector parasitics for multifinger emitter and base geometries in GaAsSb/InP Type-II DHBTs,” in the Technical Digest, 2006 Comp. Semi. MANTECH Conference, pp. 161-164, 2006.
  19. J. Limb, D. Yoo, J.-H. Ryou, W. Lee, S.-C. Shen, M. Reed, C. Collins, M. Wraback, D. Hanser, E. Preble, N. Williams, K. Evans, R. Dupuis “Growth and Characterization of High-Performance III-N Avalanche Photodiodes Grown on Bulk GaN Substrates,” presented at the 48th Electronic Materials Conference, University Park, Pennsylvania, June 28 – 30, 2006
  20. D. Yoo, J. Limb, J.-H. Ryou, S.-C. Shen, A. Ewing, Y. Korenblit, D. Hanser, E. Preble, K. Evans, and R. Dupuis, “Growth and Characterization of AlGaN Ultraviolet Avalanche Photodiodes on GaN substrates,” presented in the 49th Electronic Materials Conference, University of Notre Dame, Indiana, June 19 – 22, 2007
  21. J. Liu, J. Ryou, W. Lee, Y. Zhang, S.-C. Shen, and R.D. Dupuis, “Optimization of regrowth interface in III-Nitride-based heterostructure field effect transistors grown by MOCVD,” to be presented at the 7th International Conference on Nitride Semiconductors, Las Vegas, Nevada, September 16-21, 2007
  22. Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. D. Dupuis, and S.-C. Shen, “GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates,” to be presented at the 7th International Conference on Nitride Semiconductors, Las Vegas, Nevada, September 16-21, 2007
  23. D. Yoo, J.-B. Limb, Y. Zhang, J.-H. Ryou, S.-C. Shen, M. Reed, M. Wraback, and R. D. Dupuis, ” MOCVD Growth and Characterization of AlxGa1-xN on GaN substrates for ultraviolet avalanche photodiodes,” to be presented at the 7th International Conference on Nitride Semiconductors, Las Vegas, Nevada, September 16-21, 2007
  24. R.D. Dupuis, J. Ryou, D. Yoo, J. Limb, Y. Zhang, S.-C. Shen, and D. Yoder, “High-performance GaN and AlxGa1-xN ultraviolet avalanche photodiodes grown by MOCVD on bulk III-N substrates,” in the Proceedings of the SPIE- The international Society for Optical Engineering (SPIE Europe Security + Defense), vol. 6739, no. 1, p. 67391B-1-14, Florence, Italy, September 17-20, 2007
  25. S.-C. Shen, Y. Zhang, D. Yoo, J. Limb, J. Ryou, R. D. Dupuis, and P.D. Yoder, “Performance evaluation of GaN avalanche photodiodes fabricated on SiC and GaN substrates,” (invited paper), in the 212th ECS meeting – State-of-the-art Program on Compound Semiconductors (SOTAPOCS) 47, v. 702, p. 1263, Washington D.C., October 8-9, 2007
  26. R. D. Dupuis. D. Yoo, J.-H. Ryou, Y. Zhang, S.-C. Shen, J.-B. Limb, D. Hanser, E. Preble, and K. Evans, “Growth and characterization of high-performance GaN and AlGaN ultraviolet avalanche photodiodes grown on GaN substrates,” presented at the Fall 2007 MRS Meeting Symposium, Boston, MA, Nov. 26-30, 2007
  27. R. D. Dupuis, Y. Zhang, D. Yoo, J. Limb, J.-H. Ryou, and S.-C. Shen, “High-performance GaN ultraviolet avalanche photodiodes fabricated on free-standing bulk GaN substrates,” (6894-78), presented at the SPIE Photonics West – Opto 2008, San Jose, California, Jan. 23-28, 2008
  28. Y. Zhang, M. Britt, J.-H. Ryou, R.D. Dupuis, and S.-C. Shen, ” A surface treatment technique for III-N device fabrication,” in the Digest of Papers, 2008 CS MANTECH conference, p. 13.3, Chicago, IL, April 16, 2008
  29. H. J. Kim, S. Choi, J.-H. Ryou, D. Yoo, J. L., Y. Zhang, S.-C. Shen, and R. D. Dupuis, “Ultraviolet avalanche photodiodes based on AlGaN grown on free-standing GaN and AlN substrates” (L5), presented at the 7th International Symposium on Semiconductor Light Emitting Devices (ISSLED 2008), Phoenix, Arizona, Apr. 27-May 2, 2008
  30. S. Choi, H. J. Kim, J.-H. Ryou, D. Yoo, J. Limb, C. A. Horne, Y. Zhang, S.-C. Shen, and R. D. Dupuis, “Ultraviolet avalanche photodiodes based upon AlGaN grown on free-standing AlN and GaN substrates” (F1), presented at the 50th Electronic Materials Conference (EMC 2008), Santa Barbara, California, Jun. 25-27, 2008
  31. H. J. Kim, S. Choi, J.-H. Ryou, D. Yoo, Y. Zhang*, S.-C. Shen, and R. D. Dupuis, “AlGaN deep ultraviolet avalanche photodiodes on free-standing bulk substrates grown by MOCVD” (We-P.14), presented at the 14th International Conference of Metalorganic Vapor Phase Epitaxy (ICMOVPE XIV), Metz, France, June 1-6, 2008
  32. R. D. Dupuis, S.-C. Shen, Y. Zhang, H. Kim, S. Choi, B. Narayan*, J. Ryou, X. Bai, and J. C. Campbell, ” GaN Deep-Ultraviolet Avalanche Photodiodes Grown on Free-Standing GaN Substrates for Linear and Geiger Mode Operations,” (Invited Talk) presented at the 2008 IEEE Lester Eastman Conference on High-Performance Devices, University of Delaware, August 5-7, 2008
  33. S.-C. Shen, R.-D. Dupuis, Y. Zhang, H. Kim, S. Choi, J.-H. Ryou, J. Campbell, “Geiger-mode Operation of GaN Deep-Ultraviolet Avalanche Photodiodes Grown on Bulk GaN Substrates,” presented at the 2008 International Workshop on Nitride Semiconductors, Montreux, Switzerland, October 6-10, 2008
  34. Y. Zhang, B. Narayan, S.-C. Shen, “Sidewall Leakage Reduction in Mesa-Etched PN Junctions Using a Surface Depletion Technique,” presented at the 2008 International Workshop on Nitride Semiconductors, Montreux, Switzerland, October 6-10, 2008
  35. P. D. Yoder, S. Sridharan, S.-C. Shen, J.-H. Ryou, and R. D. Dupuis, “Geiger mode simulation of GaN homojunction avalanche photodetectors” (Mo4-P15), presented at the International Workshop on Nitride Semiconductors, Montreux, Switzerland, Oct. 6-10, 2008
  36. S. Choi, H. J. Kim, J.-H. Ryou, Y. Zhang, S.-C. Shen, and R. Dupuis, “Geiger-mode and linear-mode operation of deep-ultraviolet avalanche photodiodes based upon homoepitaxial GaN PIN diodes” (A1.5), presented at the 2008 MRS (Material Research Society) Fall meeting, Boston, Massachusetts, Dec. 1-5, 2008
  37. R. D. Dupuis, J. H. Ryou, H. J. Kim, S. Choi, Y. Zhang, B. Narayan, Z. Lochner, S.-C. Shen, and D. Yoder, “Growth and Fabrication of High-Performance GaN-Based Ultraviolet Avalanche Photodiodes,” presented at the 2009 SPIE Photonics West Conference, San Jose, CA, Jan. 24-29, 2009
  38. J. Liu, Z. Locher, Y. Zhang, H. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, K. Sun, Y. Huang, T. Li, Q. Wei, A. Fischer, and F. Ponce, “Growth and characterization of epitaxial structures for violet and blue laser diodes grown by MOVPE,” presented at the 13th European Workshop on Metalorganic Vapor Phase Epitaxy (EWMOVPE 2009), in Ulm, Germany, Jun. 7-10, 2009
  39. J. Liu, Z. Locher, Y. Zhang, S.-S. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, K. Sun, Y. Huang, T. Li, Q. Wei, A. Fischer, and F. Ponce, “Growth and characterization of epitaxial structures for violet and blue laser diodes grown by MOCVD,” presented at the 14th US Workshop on Organometallic Vapor Phase Epitaxy (OMVPE 14), Lake Geneva, Wisconsin, Aug. 9-14, 2009
  40. Y.-C. Lee, S.-C. Shen, H.-J. Kim, Y. Zhang, S. Choi, J.-H. Ryou, and R. D. Dupuis, “High performance GaN/InGaN heterojunction bipolar transistors using a direct-growth approach” presented at the The 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Oct. 18-23, 2009
  41. B. Narayan, G. Zhu, H. J. Kim, S. Choi, J. H. Ryou, R. D. Dupuis, Y. Zhang, A. Bhalla, and S.-C. Shen, “On the breakdown voltage performance of AlGaN/GaN HFETs grown on sapphire substrates,” (poster), the 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju Island, South Korea, Oct. 18-23, 2009
  42. J. Liu, Y. Zhang, Z. Locher, S. Kim, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Wei, K. Sun, Y. Huang, T. Li, A. Fischer, and F. Ponce, “Characteristics of blue InGaN-based laser diodes with InGaN waveguides,” presented at the 8th International Conference on Nitride Semiconductors (ICNS-8), Jeju, Korea, Sep. 18-23, 2009
  43. J. Liu, J.-H. Ryou, Y. Zhang, S. Kim, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Q. Wei, K. Sun, Y. Huang, T. Li, A. Fischer, and F. Ponce, “Growth and properties of blue InGaN-based laser diodes with InGaN waveguides,” presented at the 2010 SPIE Photonics West Symposium, San Francisco, CA, Jan. 23-28, 2010
  44. Y.-C. Lee, H.-J. Kim, S. Choi, R. D. Dupuis, J.-H. Ryou, and S.-C. Shen, “A study on the base recombination current in npn GaN/InGaN DHBTs using a direct-growth technique,” in the Digest of the 2010 CSMANTECH Conference, pp. 211-214, Portland, OR, May 17-21, 2010
  45. Z. Lochner, H.-J. Kim, S. Choi, Y.-C. Lee, Y. Zhang, J.-H. Ryou, S.-C. Shen, R. Dupuis, “Growth and characterization of npn heterojunction bipolar transistors with InxGa1-xN bases,” presented at the 15th International Conference on Metal Organic Vapor Phase Epitaxy, Lake Tahoe, NV, May 23-28, 2010
  46. Y. Zhang, J. Liu, T.-K. Kao, S. Kim, Y. Lee, Z. Lochner, J.-H. Ryou, P. D. Yoder, R. D. Dupuis, and S.-C. Shen, “Performance of InGaN-based laser diodes using a step-graded AlxGa1-xN electron blocking layer,” presented at the 2010 IEEE Lester Eastman Conference, Troy, New York, August 3-5, 2010
  47. Z. Lochner, H.-J. Kim, S. Choi, Y.-C. Lee, Y. Zhang, J.-H. Ryou, S.-C. Shen, and R. D. Dupuis, “Growth and characterization of InGaN/GaN Heterojunction bipolar transistors,” presented at the International Workshop on Nitride Semiconductors 2010, Tampa, Florida, September 19-24, 2010
  48. Y. Zhang, Y. Lee, Z. Lochner, H. Kim, S. Choi, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, “GaN/InGaN double heterojunction bipolar transistors on sapphire substrates with current gain > 100, JC > 7.2 kA/cm2, and power density > 240 kW/cm2,” presented at the International Workshop on Nitride Semiconductors 2010, Tampa, Florida, September 19-24, 2010
  49. Y. Zhang, Y.-C. Lee, Z. Lochner, H. J. Kim, J.-H. Ryou, R. D. Dupuis, and S.-C. Shen, “GaN/InGaN heterojunction bipolar transistors with collector current density > 20 kA/cm2,” presentated in the 2011 CSMANTECH Conference, Palm Springs, CA, May 16-19, 2011
  50. T.-T. Kao, C.-Y. Wang, S.-C. Shen, D. Girdhar, and F. Hebert, “2.5 Ampere AlGaN/GaN HFETs on Si substrates with breakdown voltage > 1250 V,” presented on the 2011 CSMANTECH Conference, Palm Springs, CA, May 16-19, 2011
  51. Y.-C. Lee, Y. Zhang, Z. Lochner, H.-J. Kim, J. H. Ryou, R. D. Dupuis, and S.-C. Shen, “Ultra-high-power characteristics of GaN/InGaN HBTs,” presented in the the 9th International Conference on Nitride Semiconductors (ICNS-9), Glasgow, UK, July 10-15, 2011
  52. Z. Lochner, H.-J. Kim, Y. Zhang, Y.-C. Lee, S. Choi, S.-C. Shen, P. D. Yoder, J.-H. Ryou, and R. D. Dupuis, “Epitaxial and characterization of npn-GaN/InGaN/GaN heterojunction bipolar transistors on foreign and native substrates,” presented at ACCGE-18/OMVPE-15, Monterey, CA, July 31-Aug. 5, 2011.
  53. R. D. Dupuis, S.-C. Shen, Z. Lochner, H.-J. Kim, Y.-C. Lee, Y. Zhang, and J.-H. Ryou, “III-Nitride heterojunction field-effect transistors and heterojunction bipolar transistors for next-generation power electronics,” (Invited) presented in the 220th ECS Meeting & Electrochemical Energy Summit, Boston, MA, October 9-14, 2011.
  54. Y.-C. Lee, C.-Y. Wang, T.-T. Kao, and S.-C. Shen, “Threshold voltage control of recessed-gate III-N HFETs Using an Electrode-less Wet Etching Technique,” presented in the 2012 CSMANTECH Conference, Boston, MA, April 23-26, 2012.
  55. Z. Lochner, H. Kim, Y.-C. Lee, Y. Zhang, S. Choi, J. Ryou, S.-C. Shen, D. Yoder and R. D. Dupuis, “High power and RF characteristics of npn-GaN/InGaN/GaN heterojunction bipolar transistors on sapphire and free-standing GaN substrates,” presented in the 16th International Conference on Metal Organic Vapor Phase Epitaxy, Busan, Korea, May 20-25, 2012.
  56. Z. Lochner, H.J. Kim, Y. Lee, Y. Zhang, S. Choi, J. H. Ryou, S.-C. Shen, P.D. Yoder and R. D. Dupuis, “Ultra-high power and RF operation of GaN/InGaN heterojunction bipolar transistors on free-standing GaN substrates,” (Invited), presented in the 4th International Symposium on Growth of III-Nitrides (ISGN), St. Petersburg, Russia, July 16-19, 2012.
  57. R. D. Dupuis, Y. Lee, Z. Lochner, H. Kim, Y. Zhang, J. Ryou and S. Shen, “Recent Advances in III-N High-Power Electronics,” presented in the 2012 Pacific Rim Meeting on Electrochemical and Solid-State Science (PRiME), Honolulu, Hawaii, October 7-12, 2012.
  58. R. D. Dupuis, Z. Lochner, X. Li, J.-H. Ryou, T. Kao*, S.-C. Shen, P. D. Yoder, M. Satter, A. Fisher and F. Ponce, “Room-temperature optically pumped AlGaN/AlN multiple quantum well lasers operating at
  59. Y.-C. Lee, T. Kao and S.-C. Shen, “A Study on Al2O3 Gate Dielectric Deposition Using Atomic Layer Depositions,” presented in the CSMANTECH Conference in New Orleans, LA, May 17-23, 2013
  60. Z. Lochner, Y.-S. Liu, T.-T. Kao, X. Li, M. Satter, J.-H. Ryou, S.-C. Shen, P. D. Yoder, R. D. Dupuis, Y. Wei, H. Xie, A. Fisher and F. Ponce, “Optically pumped AlGaN quantum-well lasers at ~ 243.5 nm grown by MOCVD on AlN substrates,” presented in the 2013 European Material Research Society Spring Meeting, Strasbourg, France, May 27-31, 2013.
  61. T.-T. Kao, Z. Lochner, Y.-C. Lee, J. Kim, H.-J. Kim, J.-H. Ryou, R. D. Dupuis and S.-C. Shen, “Light-emitting characteristics of GaN/InGaN heterojunction bipolar transistors,” presented in the 2013 European Material Research Society Spring Meeting, Strasbourg, France, May 27-31, 2013.
  62. X. Li, Z. Lochner, Y.-S. Liu, T.-T. Kao, M. Satter, J.-H. Ryou, S.-C. Shen, P. D. Yoder and R. D. Dupuis, “Grwoth of high Al-content AlGaN on AlN/Sapphire template by high-temperature metalorganic chemical vapor deposition,” presented in the 55th Electronic Materials Conference, South Bend, IN, June 26-28, 2013.
  63. Y.-S. Liu, T.-T. Kao, Z. Lochner, X. Li, M. Satter, J.-H. Ryou, S.-C. Shen, P.D. Yoder, T. Detchprohm, R. D. Dupouid, Y. Wei, H. Xie, A. Fischer, and F. Ponce, “Low-threshold optically pumped AlGaN based Deep-ultraviolet multi-quantum-well laser grown by MOCVD on AlN substrates,” presented in the 10th International Conference on Nitride Semiconductors, Washington, D.C., August 25-30, 2013.
  64. Z. Lochner, X. Li, Y.-S. Liu, T.-T. Kao*, M. Satter, J.-H. Ryou, S.-C. Shen, P.D. Yoder, T. Detchprohm, R. D. Dupouid, Y. Wei, H. Xie, A. Fischer, and F. Ponce, “Stimulated emission at 256.1 nm with a low threshold optical pumping power density from AlGaN multiple quantum well grown at high-temperature on sapphire,” presented in the 10th International Conference on Nitride Semiconductors, Washington, D.C., August 25-30, 2013.
  65. D. Yoder, M. Satter, V. Kolesov,T. Philip, Y. Liu, T. Kao, Z. Lochner, J. Ryou, S.-C. Shen, T. Detchprohm and R. Dupuis, “Theoretical analysis of strategies for improving p-type conductivity in wurtzite III-Nitride devices for high-power opto- and microelectronics applications,” presented in the 10th International Conference on Nitride Semiconductors, Washington, D.C., August 25-30, 2013.
  66. J. Kim, T. Kao, J. Ryou, T. Detvhprohm, S.-C. Shen and R. D. Dupuis, “Performance improvement of NoN-GaN/InGaN/GaN heterojunction bipolar transistors on sapphire substrates by modified doping profile,” presented in the 10th International Conference on Nitride Semiconductors, Washington, D.C., August 25-30, 2013.
  67. R. D. Dupuis, J. Kim, Z. Lochner, M. Ji, T. Kao, J. Ryou, T. Detchphrom, and S.-C. Shen, “III-N High-power electronic devices,” presented in the 224th ECS Meeting, San Francisco, CA, October 27 – November 1, 2013.
  68. R. D. Dupuis, J. Kim, T. Kao, Z. Lochner, M. Ji, J. Ryou, T. Detchphrom and S.-C. Shen, “Bipolar III-N high-power electronic devices,” presented in the 1st IEEE Workshop on Wide Bandgap Power Devices & Applications, Columbus, OH, Oct. 27-29, 2013.
  69. Y. Liu, T. Kao, Z. Lochner, X. Li, M. Satter, S.-C. Shen, P. D. Yoder, T. Detchprohm and R. D. Dupuis, ” Optically pumped deep-ultraviolet AlGaN multi-quantu-well lasers grown by metalorganic chemical vapor deposition,” to be presented in SPIE Photonics West, February 1-6, 2014, San Francisco, CA.
  70. Y.-C. Lee, T. Kao, J. Kim, M.-H. Ji, T. Detchprohm, R. D. Dupuis and S.-C. Shen, “Device degradation mechanisms in npn GaN/InGaN heterojunction bipolar transistors,” to be presented in the 39th GOMACTech Conference, March 30 – April 4, 2014, Charleston, SC. (Poster)
  71. Y.-C. Lee, T. Kao, J. Merola, C. Lian, D. Wang, D. Hou and S.-C. Shen, “Observation on slow carrier trapping in AlGaN/GaN Schottky and MIS diodes,” to be presented in the 2014 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH) in Denver, CO, May 19-22, 2014. (Poster)
  72. Y.-C. Lee, T. Kao, J. Kim, M. Ji, T. Detchphrom, R. Dupuis and S.-C. Shen, “Npn GaN/InGaN heterojunction bipolar transistors using a palladium-based contact scheme,” to be presented in the 2014 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH) in Denver, CO, May 19-22, 2014.
  73. T. Kao, J. Kim, M. Ji, T. Detchprohm, R. D. Dupuis and S.-C. Shen, “Homojunction GaN p-i-n rectifiers with ultra-low on-state resistance,” to be presented in the 2014 International Conference on Compound Semiconductor Manufacturing Technology (CSMANTECH) in Denver, CO, May 19-22, 2014.
Presentations
  1. S.-C. Shen, R. D. Dupuis, and M. Feng, “Device technologies for Next-Generation Base Station PAs,” presented in the IEEE MTT-S 2005 Intl. Microwave Symposium Workshop: “Practical implementation of RF power amplifiers for cellular base stations”, Long Beach, CA, June 12, 2005
  2. S.-C. Shen, “GaN Transistors in Power Electronic Applications,” (invited short course), National Central University, Chun-Li, Taiwan, November 8-9, 2006
  3. S.-C. Shen, “Compound Semiconductors in Communication Systems,” (invited talk), Shanghai Jiao-Tung University, Shanghai, China, June 28. 2007
  4. S.-C. Shen, ” GaN-based Microelectronic and Optoelectronic devices,” (Invited talk), National Chiao-Tong University, Hsin-Chu, Taiwan, October 26, 2009
  5. S.-C. Shen, “III-N Power Transistors,” (Invited, NSVL Distinguished Faculty Seminar), National Semiconductor Corp., Santa Clara, CA, May 7, 2010
  6. S.-C. Shen, “GaN-based Heterojunction Bipolar Transistor Technology for next-generation microelectronics,” (Invited talk) presented in the 2010 CMOS Emerging Technologies Workshop, Whistler, BC, Canada, May 19-21, 2010
  7. S.-C. Shen, “GaN-based Power Electronics,” (Workshop lecture), presented in the 2010 MTT-S Intl. Microwave Symposium Workshop, Anaheim, CA, May 28, 2010
  8. S.-C. Shen, “III-Nitride Heterojunction Bipolar Transistors,” (Invited talk), National Tsing-Hua University, Hsin-Chu, Taiwan, June 3, 2011
  9. S.-C. Shen, “High-Voltage III-Nitride Field Effect Transistors,” Global Communication Semiconductors, LLC, Torrance CA, August 7, 2012
  10. S.-C. Shen, “III-Nitride Transistor Switches for Power Electronics,” (Invited talk), presented at the 2013 CMOS emerging Technologies Symposium, Whistler, BC Canada, July 17-19, 2013.
  11. S.-C. Shen, “III-N Transistors,” (Seminar) Hosei University, Tokyo, Japan, March 14, 2013
  12. S.-C. Shen, “III-N Transistor Technologies,” (Invited Talk), National Tsing-Hua University, Hsin-Chu, Taiwan, March 18, 2013.
  13. S.-C. Shen, “III-N Bipolar Device Technologies,” (Invited Talk), Ohio State University, Columbus, OH, October 30, 2013.
Thesis
  1. Z. Mehra, Undergraduate Thesis, B.S.E.E., School of ECE, Georgia Tech, 2008
  2. N. Bravishma, M.S. Thesis, School of ECE, Georgia Tech, 2010
  3. Y. Zhang, Ph.D. Dissertation, School of ECE, Georgia Tech, 2011