Semiconductor Device Research Group
A research group at Georgia Tech led by: Dr. Shyh-Chiang Shen
Research Area: III-Nitride lasers, LEDs, detectors and transistors.
- Wide bandgap semiconductor device design, fabrication, and characterization
- Expanded research toward high-performance III-N integrated circuits and integrated optoelectronics.
We have a 1,000 square-feet of class-1,000 cleanroom laboratory along with a semiconductor characterization room that is home to several semiconductor fabrication and measurement systems. We also access other fabrication facilities at Georgia Tech (such as MiRC and CCS) to conduct our research projects.
Our research focuses on wide-bandgap semiconductors, including their applications in optoelectronics and power electronics. The research is heavily sided on novel device design, validation, and manufactuable fabrication technology development. Read on for an explanation of why we concentrate on gallium nitride (GaN).
- High-power III-N Heterojunction Field Effect Transistors (HFETs) and MISFETs
- InGaN Heterojunction Bipolar Transistors (HBTs)
- Bipolar switches: PIN rectifiers, etc.
- InGaN Blue/green lasers
- UV Laser Diodes
- DUV single-photon detectors & avalanche photodiodes (APDs)
We are constantly looking for highly motivated students with strong semiconductor physics background for III-N optoelectronic device research.
We also would like to work with students with great interests in III-N power electronics research. Our research focuses on physical electronic device implementation and performance enhancement study.
The research involves cleanroom and laboratory work, augmented by computational simulations when necessary for detailed device physics study for next-generation devices and circuits.
School of Electrical and Computer Engineering
777 Atlantic Drive, NW
Atlanta, GA 30332-0250
Copyright ©2005—2006 S.-C. Shen.